Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/81525
Title: Advances in la-based high-k dielectrics for MOS applications
Authors: Liu, LN
Tang, WM 
Lai, PT
Keywords: High-k dielectric
Lanthanum oxide
Metal-oxide-semiconductor
Issue Date: 2019
Publisher: MDPIAG
Source: Coatings, 2019, v. 9, no. 4, 217 How to cite?
Journal: Coatings 
Abstract: This paper reviews the studies on La-based high-k dielectrics formetal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen vacancies, oxygen interstitials, interface states, and grain boundary states) are the main problems for high-performance devices. Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems. On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance. Investigations onMOS devices including non-volatile memory,MOS field-effect transistor, thin-film transistor, and novel devices (FinFET and nanowire-based transistor) suggest that La-based high-k dielectrics have high potential to fulfill the high-performance requirements in futureMOS applications.
URI: http://hdl.handle.net/10397/81525
EISSN: 2079-6412
DOI: 10.3390/coatings9040217
Rights: © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
The following publication Liu LN, Tang WM, Lai PT. Advances in La-Based High-k Dielectrics for MOS Applications. Coatings. 2019; 9(4):217, is available at https://doi.org/10.3390/coatings9040217
Appears in Collections:Journal/Magazine Article

Files in This Item:
File Description SizeFormat 
Liu_Advances_la-based_high-k.pdf4.14 MBAdobe PDFView/Open
Access
View full-text via PolyU eLinks SFX Query
Show full item record
PIRA download icon_1.1View/Download Contents

Page view(s)

11
Citations as of Dec 4, 2019

Download(s)

6
Citations as of Dec 4, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.