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|Title:||Room-temperature ferroelectricity in MoTe 2 down to the atomic monolayer limit||Authors:||Yuan, S
|Issue Date:||2019||Publisher:||Nature Publishing Group||Source:||Nature communications, 2019, v. 10, no. 1, 1775 How to cite?||Journal:||Nature communications||Abstract:||Ferroelectrics allow for a wide range of intriguing applications. However, maintaining ferroelectricity has been hampered by intrinsic depolarization effects. Here, by combining first-principles calculations and experimental studies, we report on the discovery of robust room-temperature out-of-plane ferroelectricity which is realized in the thinnest monolayer MoTe 2 with unexploited distorted 1T (d1T) phase. The origin of the ferroelectricity in d1T-MoTe 2 results from the spontaneous symmetry breaking due to the relative atomic displacements of Mo atoms and Te atoms. Furthermore, a large ON/OFF resistance ratio is achieved in ferroelectric devices composed of MoTe 2 -based van der Waals heterostructure. Our work demonstrates that ferroelectricity can exist in two-dimensional layered material down to the atomic monolayer limit, which can result in new functionalities and achieve unexpected applications in atomic-scale electronic devices.||URI:||http://hdl.handle.net/10397/80848||EISSN:||2041-1723||DOI:||10.1038/s41467-019-09669-x||Rights:||This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
The following publication Yuan, S., Luo, X., Chan, H. L., Xiao, C., Dai, Y., Xie, M., & Hao, J. (2019). Room-temperature ferroelectricity in MoTe 2 down to the atomic monolayer limit. Nature communications, 10(1), 1775 is available at https://doi.org/10.1038/s41467-019-09669-x
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Citations as of Oct 15, 2019
Citations as of Oct 15, 2019
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