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Title: | Lanthanide Yb/Er co-doped semiconductor layered WSe2 nanosheets with near-infrared luminescence at telecommunication wavelengths | Authors: | Bai, GX Yang, ZB Lin, HH Jie, WJ Hao, JH |
Issue Date: | 21-May-2018 | Source: | Nanoscale, 21 May 2018, v. 10, no. 19, p. 9261-9267 | Abstract: | Atomically thin layers of transition metal dichalcogenides (TMDs) have recently drawn great attention. However, doping strategies and controlled synthesis for wafer-scale TMDs are still in their early stages, greatly hindering the construction of devices and further basic studies. In this work, we develop the fast deposition of wafer-scale layered lanthanide ion Yb/Er co-doped WSe2 using pulsed laser deposition. WSe2 nanosheets were chosen as the host, while Yb3+ and E3+ ions served as the sensitizer and activator, respectively. The obtained Yb/Er co-doped WSe2 layers exhibit good uniformity and high crystallinity with highly textured features. Under the excitation of a diode laser at 980 nm, down-conversion emission is observed at around 1540 nm, assigned to the emission transition between the (4) I-13/2 and I-4(15/2) states of Er3+. Considering the significance of 1540 nm luminescence in the application of photonic technologies, this observation in the WSe2 :Yb/Er nanosheets down to the monolayer provides a new opportunity for developing photonic devices at the 2D limit. Our work not only offers a general method to prepare waferscale lanthanide doped TMD5, but also to widely modulate the luminescence of atomically layered TMD5 by introducing lanthanide ions. | Publisher: | Royal Society of Chemistry | Journal: | Nanoscale | ISSN: | 2040-3364 | EISSN: | 2040-3372 | DOI: | 10.1039/c8nr01139g | Rights: | This journal is © The Royal Society of Chemistry 2018 The following publication Bai, G., Yang, Z., Lin, H., Jie, W., & Hao, J. (2018). Lanthanide Yb/Er co-doped semiconductor layered WSe 2 nanosheets with near-infrared luminescence at telecommunication wavelengths. Nanoscale, 10(19), 9261-9267 is available at https://doi.org/10.1039/c8nr01139g. |
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