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Title: | Fast, self-driven, air-stable, and broadband photodetector based on vertically aligned PtSe2/GaAs heterojunction | Authors: | Zeng, LH Lin, SH Li, ZJ Zhang, ZX Zhang, TF Xie, C Mak, CH Chai, Y Lau, SP Luo, LB Tsang, YH |
Issue Date: | 18-Apr-2018 | Source: | Advanced functional materials, 18 Apr. 2018, v. 28, no. 16, 1705970 | Abstract: | Group-10 layered transitional metal dichalcogenides including PtS2, PtSe2, and PtTe2 are excellent potential candidates for optoelectronic devices due to their unique properties such as high carrier mobility, tunable bandgap, stability, and flexibility. Large-area platinum diselenide (PtSe2) with semiconducting characteristics is far scarcely investigated. Here, the development of a high-performance photodetector based on vertically aligned PtSe2-GaAs heterojunction which exhibits a broadband sensitivity from deep ultraviolet to near-infrared light, with peak sensitivity from 650 to 810 nm, is reported. The Ilight/Idark ratio and responsivity of photodetector are 3 × 104 and 262 mA W−1 measured at 808 nm under zero bias voltage. The response speed of τr/τf is 5.5/6.5 µs, which represents the best result achieved for Group-10 TMDs based optoelectronic device thus far. According to first-principle density functional theory, the broad photoresponse ranging from visible to near-infrared region is associated with the semiconducting characteristics of PtSe2 which has interstitial Se atoms within the PtSe2 layers. It is also revealed that the PtSe2/GaAs photodetector does not exhibit performance degradation after six weeks in air. The generality of the above good results suggests that the vertically aligned PtSe2 is an ideal material for high-performance optoelectronic systems in the future. | Keywords: | Broadband Density functional theory Heterojunctions Photodetectors Transitional metal dichalcogenides |
Publisher: | Wiley-VCH | Journal: | Advanced functional materials | ISSN: | 1616-301X | EISSN: | 1616-3028 | DOI: | 10.1002/adfm.201705970 | Rights: | © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim This is the peer reviewed version of the following article: Zeng, L. H., Lin, S. H., Li, Z. J., Zhang, Z. X., Zhang, T. F., Xie, C., ... & Tsang, Y. H. (2018). Fast, self‐driven, air‐stable, and broadband photodetector based on vertically aligned PtSe2/GaAs heterojunction. Advanced Functional Materials, 28(16), 1705970, which has been published in final form at https://doi.org/10.1002/adfm.201705970. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited. |
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Zeng_Fast_Self-Driven_Air-Stable.pdf | Pre-Published version | 2.03 MB | Adobe PDF | View/Open |
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