Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/75736
Title: Enhanced piezoelectricity of monolayer phosphorene oxides : a theoretical study
Authors: Yin, HB 
Zheng, GP 
Gao, JW 
Wang, YX
Ma, YC
Issue Date: 2017
Publisher: Royal Society of Chemistry
Source: Physical chemistry chemical physics, 2017, v. 19, no. 40, p. 27508-27515 How to cite?
Journal: Physical chemistry chemical physics 
Abstract: Two-dimensional (2D) piezoelectric materials have potential applications in miniaturized sensors and energy conversion devices. In this work, using first-principles simulations at different scales, we systematically study the electronic structures and piezo electricity of a series of 2D monolayer phosphorene oxides (POs). Our calculations show that the monolayer POs have tunable band gaps along with remarkable piezoelectric properties. The calculated piezoelectric coefficient d(11) of 54 pm V-1 in POs is much larger than those of 2D transition metal dichalcogenide monolayers and the widely used bulk alpha-quartz and AIN, and almost reaches the level of the piezoelectric effect in recently discovered 2D GeS. Furthermore, two other considerable piezoelectric coefficients, i.e., d(31) and d(26) with values of -10 pm V-1 and 21 pm V-1, respectively, are predicted in some monolayer POs. We also examine the correlation between the piezoelectric coefficients and energy stability. The enhancement of piezo electricity for monolayer phosphorene by oxidation will broaden the applications of phosphorene and phosphorene derivatives in nano-sized electronic and piezotronic devices.
URI: http://hdl.handle.net/10397/75736
ISSN: 1463-9076
EISSN: 1463-9084
DOI: 10.1039/c7cp05669a
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