Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/74732
PIRA download icon_1.1View/Download Full Text
Title: High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions
Authors: Xi, Z
Jin, Q
Zheng, C
Zhang, Y
Lu, C
Li, Q
Li, S
Dai, J 
Wen, Z 
Issue Date: 2017
Source: Applied physics letters, 2017, v. 111, no. 13, 132905, p. 132905-1-132905-5
Abstract: Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3 tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3 barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3 device exhibits a giant ROFF/RON resistance ratio of ∼3 × 105 at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3 barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ∼0.93 eV and room-temperature retention time of ∼70 years can be extracted.
Publisher: American Institute of Physics Inc.
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4999270
Rights: © 2017 Author(s).
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Z. Xi et al., Appl. Phys. Lett. 111, 132905 (2017) and may be found at https://dx.doi.org/10.1063/1.4999270
Appears in Collections:Journal/Magazine Article

Files in This Item:
File Description SizeFormat 
Xi_High-temperature_Tunneling_Electroresistance.pdf2.06 MBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show full item record

Page views

120
Last Week
0
Last month
Citations as of Mar 24, 2024

Downloads

155
Citations as of Mar 24, 2024

SCOPUSTM   
Citations

12
Last Week
1
Last month
Citations as of Mar 28, 2024

WEB OF SCIENCETM
Citations

12
Last Week
0
Last month
Citations as of Mar 28, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.