Please use this identifier to cite or link to this item:
Title: High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions
Authors: Xi, Z
Jin, Q
Zheng, C
Zhang, Y
Lu, C
Li, Q
Li, S
Dai, J 
Wen, Z 
Issue Date: 2017
Publisher: American Institute of Physics Inc.
Source: Applied physics letters, 2017, v. 111, no. 13, 132905 How to cite?
Journal: Applied physics letters 
Abstract: Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3 tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3 barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3 device exhibits a giant ROFF/RON resistance ratio of ∼3 × 105 at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3 barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ∼0.93 eV and room-temperature retention time of ∼70 years can be extracted.
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4999270
Appears in Collections:Journal/Magazine Article

View full-text via PolyU eLinks SFX Query
Show full item record


Last Week
Last month
Citations as of Oct 20, 2018

Page view(s)

Citations as of Oct 15, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.