Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/74721
Title: Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers
Authors: Qiu, XY
Wang, RX
Zhang, Z 
Wei, ML
Ji, H
Chai, Y 
Zhou, FC 
Dai, JY 
Zhang, T
Li, LT
Meng, XS
Issue Date: 2017
Publisher: American Institute of Physics Inc.
Source: Applied physics letters, 2017, v. 111, no. 14, 142103 How to cite?
Journal: Applied physics letters 
Abstract: A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103 cycles. Furthermore, inserting a HfO2 buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103 and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2 layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.
URI: http://hdl.handle.net/10397/74721
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4990089
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

Page view(s)

25
Citations as of Oct 15, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.