Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6934
Title: Sputtering pressure dependence of hydrogen-sensing effect of palladium films
Authors: Ong, CW 
Tang, YM
Keywords: Hydrogenation
Pd
Sputtering
Issue Date: Jun-2009
Publisher: Cambridge University Press
Source: Journal of materials research, June 2009, v. 24, no. 6, p. 1919-1927 How to cite?
Journal: Journal of materials research 
Abstract: The electrical resistivity ρ of palladium (Pd) films prepared by using magnetron sputtering at different pressures φ ranging from 2 to 15 mTorr showed very different hydrogen (H)-induced response. This reaction is because the mean free path of the particles in vacuum changes substantially with φ, such that the structure of the deposits is altered accordingly. A film prepared at a moderate φ value of 6 mTorr has a moderate strength. After a few hydrogenation-dehydrogenation cycles, some cracks are generated because of the great difference in the specific volumes of the metal and hydride phases. Breathing of the cracks in subsequent switching cycles occurred, which led to the response gain of ρ, defined as the resistivity ratio of the dehydrogenated-to-hydrogenated states during a cycle, to increase to 17. This result demonstrates the attractiveness of using the Pd films in H₂ detection application. The H-induced resistive response of the films prepared at other φ values was found to be much smaller.
URI: http://hdl.handle.net/10397/6934
ISSN: 0884-2914 (print)
2044-5326 (EISSN)
DOI: 10.1557/jmr.2009.0238
Rights: © 2009 Materials Research Society
The following article "Chung Wo Ong and Yu Ming Tang (2009). Sputtering pressure dependence of hydrogen-sensing effect of palladium films. Journal of Materials Research, 24(6), pp 1919-1927. doi:10.1557/jmr.2009.0238." is available at http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7949506
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