Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6933
Title: Room-temperature hydrogen-induced resistivity response of Pd/Mg–Ni films
Authors: Tang, YM
Ong, CW 
Keywords: Hydrogenation
X-ray diffraction (XRD)
X-ray photoelectron spectroscopy (XPS)
Issue Date: Jun-2009
Publisher: Cambridge University Press
Source: Journal of materials research, June 2009, v. 24, no. 6, p. 1928-1935 How to cite?
Journal: Journal of materials research 
Abstract: The structure and the response of the effective electrical resistivity 〈ρ〉 in hydrogenation–dehydrogenation processes of palladium-coated/magnesium-nickel (Pd/Mg–Ni) films were investigated as functions of Mg-to-Ni ratio, substrate temperature, and thickness of Pd overcoat. Films of noncrystalline structures with various Mg-to-Ni ratios showed prominent hydrogen-(H-)induced switching effect of 〈ρ〉. A film is supposed to contain segregated noncrystalline regions of different Mg-to-Ni ratios. The regions of an Mg-to-Ni ratio close to 2 are responsible for the switching processes. At room temperature, a dehydrogenation process is much slower than a hydrogenation process. Crystallization hindered the H-induced switching effect of 〈ρ〉. The use of a thicker Pd overcoat accelerated the change of 〈ρ〉 in the initial hydrogenating process but diminished the contrast. Results led to some discussions on the mechanisms governing the switching effects.
URI: http://hdl.handle.net/10397/6933
ISSN: 0884-2914
EISSN: 2044-5326
DOI: 10.1557/jmr.2009.0226
Rights: © 2009 Materials Research Society
The following article "Yu Ming Tang and Chung Wo Ong (2009). Room-temperature hydrogen-induced resistivity response of Pd/Mg–Ni films. Journal of Materials Research, 24(6), pp 1928-1935. doi:10.1557/jmr.2009.0226." is available at http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7949508
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