Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/62050
Title: Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions
Authors: Yan, ZB
Yau, HM
Li, ZW
Gao, XS
Dai, JY 
Liu, JM
Issue Date: 2016
Source: Applied physics letters, 2016, v. 109, no. 5, 53506, p. 053506-1-053506-5
Abstract: Complementary resistive switching (CRS) has potential applications in ultra-high density three-dimensional crossbar arrays for resistive random access memories and Logic-in-Memories. For real applications, the good stability and electroforming-free character have become essential pre-requisites. In this work, we investigate the resistance switching behaviors of a CRS device based on two anti-serial Au/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions (FTJs). This FTJ-based CRS device shows a stable butterfly-like resistance-voltage hysteresis, as well as self-electroforming, multi-switching, and good performance complementary switching behaviors. The present work presents a convincing demonstration of the complementary multi-switching states modulated by remnant ferroelectric polarization, making the FTJ structure good potentials for high-performance CRS memristors.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4960523
Rights: © 2016 Author(s).
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Z. B. Yan et al., Appl. Phys. Lett. 109, 053506 (2016) and may be found at https://dx.doi.org/10.1063/1.4960523
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