Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/62050
Title: Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions
Authors: Yan, ZB
Yau, HM
Li, ZW
Gao, XS
Dai, JY 
Liu, JM
Issue Date: 2016
Publisher: American Institute of Physics
Source: Applied physics letters, 2016, v. 109, no. 5, 053506 How to cite?
Journal: Applied physics letters 
Abstract: Complementary resistive switching (CRS) has potential applications in ultra-high density three-dimensional crossbar arrays for resistive random access memories and Logic-in-Memories. For real applications, the good stability and electroforming-free character have become essential pre-requisites. In this work, we investigate the resistance switching behaviors of a CRS device based on two anti-serial Au/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions (FTJs). This FTJ-based CRS device shows a stable butterfly-like resistance-voltage hysteresis, as well as self-electroforming, multi-switching, and good performance complementary switching behaviors. The present work presents a convincing demonstration of the complementary multi-switching states modulated by remnant ferroelectric polarization, making the FTJ structure good potentials for high-performance CRS memristors.
URI: http://hdl.handle.net/10397/62050
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4960523
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