Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61933
Title: Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Authors: Cheng, ZX
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM 
Issue Date: 2016
Publisher: American Institute of Physics
Source: Applied physics letters, 2016, v. 109, no. 2, 023514 How to cite?
Journal: Applied physics letters 
Abstract: The effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2 gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOx and LaHfOx, which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 × 1011cm-2eV-1) and oxide-charge density (-3.90 × 1012cm-2), low gate leakage current density (1.77 × 10-4 A/cm2 at Vg = Vfb + 1 V), and high reliability under high-field stress.
URI: http://hdl.handle.net/10397/61933
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4958837
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