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Title: | Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer | Authors: | Cheng, ZX Xu, JP Liu, L Huang, Y Lai, PT Tang, WM |
Issue Date: | 2016 | Source: | Applied physics letters, 2016, v. 109, no. 2, 23514, p. 023514-1-023514-5 | Abstract: | The effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2 gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOx and LaHfOx, which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 × 1011cm-2eV-1) and oxide-charge density (-3.90 × 1012cm-2), low gate leakage current density (1.77 × 10-4 A/cm2 at Vg = Vfb + 1 V), and high reliability under high-field stress. | Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.4958837 | Rights: | © 2016 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Z. X. Cheng et al., Appl. Phys. Lett. 109, 023514 (2016) and may be found at https://dx.doi.org/10.1063/1.4958837 |
Appears in Collections: | Journal/Magazine Article |
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