Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61578
Title: Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β -Ga2O3 thin films
Authors: Wu, Z
Bai, G
Qu, Y
Guo, D
Li, L
Li, P
Hao, J 
Tang, W
Issue Date: 2016
Source: Applied physics letters, 2016, v. 108, no. 21, 211903, p. 211903-1-211903-4
Abstract: Highly oriented (2-01) Er3+-doped β-Ga2O3 (Er:Ga2O3) thin films with different doping concentrations were grown on (0001) sapphire substrates using radio frequency magnetron sputtering. The crystal structure, optical absorption, near-infrared luminescence, and ultraviolet photoresponse properties of Er:Ga2O3 films were systematically studied. The evolution of lattice and energy band gap with increasing doping level confirms the chemical substitution of Er3+ ions into the Ga2O3 crystal lattice. The down-shifting near-infrared luminescence (∼1538 nm: ascribed to Er3+: 4I13/2-4I15/2) was observed under ultraviolet excitation. Moreover, an obvious deep ultraviolet photoresponse was also obtained in the formed thin films.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4952618
Rights: © 2016 Author(s).
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Z. Wu et al., Appl. Phys. Lett. 108, 211903 (2016) and may be found at https://dx.doi.org/10.1063/1.4952618
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