Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61578
Title: Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β -Ga2O3 thin films
Authors: Wu, Z
Bai, G
Qu, Y
Guo, D
Li, L
Li, P
Hao, J 
Tang, W
Issue Date: 2016
Publisher: American Institute of Physics
Source: Applied physics letters, 2016, v. 108, no. 21, 211903 How to cite?
Journal: Applied physics letters 
Abstract: Highly oriented (2-01) Er3+-doped β-Ga2O3 (Er:Ga2O3) thin films with different doping concentrations were grown on (0001) sapphire substrates using radio frequency magnetron sputtering. The crystal structure, optical absorption, near-infrared luminescence, and ultraviolet photoresponse properties of Er:Ga2O3 films were systematically studied. The evolution of lattice and energy band gap with increasing doping level confirms the chemical substitution of Er3+ ions into the Ga2O3 crystal lattice. The down-shifting near-infrared luminescence (∼1538 nm: ascribed to Er3+: 4I13/2-4I15/2) was observed under ultraviolet excitation. Moreover, an obvious deep ultraviolet photoresponse was also obtained in the formed thin films.
URI: http://hdl.handle.net/10397/61578
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4952618
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