Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5865
Title: Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films
Authors: Wang, XL
Luan, CY
Shao, Q
Pruna, A
Leung, CW 
Lortz, R
Zapien, JA
Ruotolo, A
Keywords: Energy gap
Exchange interactions (electron)
II-VI semiconductors
Magnetic moments
Manganese
Red shift
Semiconductor thin films
Semimagnetic semiconductors
Wide band gap semiconductors
Zinc compounds
Issue Date: 11-Mar-2013
Publisher: American Institute of Physics
Source: Applied physics letters, 11 Mar. 2013, v. 102, no. 10, 102112, p. 1-4 How to cite?
Journal: Applied physics letters 
Abstract: Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.
URI: http://hdl.handle.net/10397/5865
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4795797
Rights: © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Wang, X. L. et al., Appl. Phys. Lett. 102, 102112 (2013) and may be found at http://link.aip.org/link/?apl/102/102112
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