Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5819
Title: Terahertz plasmonics in ferroelectric-gated graphene
Authors: Jin, D
Kumar, A
Fung, KH 
Xu, J
Fang, NX
Keywords: Dielectric waveguides
Electric domains
Ferroelectric materials
Ferroelectric storage
Fullerene devices
Graphene
Nanostructured materials
Phonons
Plasmonics
Polaritons
Sheet materials
Surface plasmons
Terahertz wave devices
Issue Date: 20-May-2013
Publisher: American Institute of Physics
Source: Applied physics letters, 20 May 2013, v. 102, no. 20, 201118, p. 1-5 How to cite?
Journal: Applied physics letters 
Abstract: Inspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the two-dimensional plasmons in graphene can strongly couple with the phonon-polaritons in ferroelectrics, leading to characteristic modal wavelength of the order of 100-200 nm at low temperature and low-THz frequencies albeit with an appreciable dissipation. By patterning the ferroelectrics into different domains, one can produce compact on-chip plasmonic waveguides, which exhibit negligible crosstalk even at 20 nm separation distance. Harnessing the memory effect of ferroelectrics, low-power operation can be achieved on these plasmonic waveguides.
URI: http://hdl.handle.net/10397/5819
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4807762
Rights: © 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Dafei Jin et al., Appl. Phys. Lett. 102, 201118 (2013) and may be found at http://link.aip.org/link/?apl/102/201118
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