Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/55484
Title: Controllable growth of large-size crystalline MoS2 and resist-free transfer assisted with a Cu thin film
Authors: Lin, Z
Zhao, Y
Zhou, C
Zhong, R
Wang, X
Tsang, YH 
Chai, Y 
Issue Date: 2015
Publisher: Nature Publishing Group
Source: Scientific reports, 2015, v. 5, 18596 How to cite?
Journal: Scientific reports 
Abstract: Two-dimensional MoS2 is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS2. In this work, we investigate the controllable growth of monolayer MoS2 evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS2, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS2 larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS2 assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS2 from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.
URI: http://hdl.handle.net/10397/55484
EISSN: 2045-2322
DOI: 10.1038/srep18596
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