Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/548
Title: Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å
Authors: Lee, PF
Dai, J 
Wong, KH
Chan, HLW 
Choy, CL
Keywords: Hafnium compounds
Semiconductor-insulator boundaries
Dielectric thin films
Permittivity
Amorphous state
Pulsed laser deposition
Transmission electron microscopy
Rapid thermal annealing
X-ray photoelectron spectra
Bonds (chemical)
Issue Date: 15-Mar-2003
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 Mar. 2003, v. 93, no. 6, p. 3665-3667 How to cite?
Journal: Journal of applied physics 
Abstract: Ultrathin amorphous Hf-aluminate (Hf-Al-O) films have been deposited on p-type (100) Si substrates by pulsed-laser deposition using a composite target containing HfO₂ and Al₂O₃ plates. Transmission electron microscopy observation of Hf-Al-O films showed that the amorphous structure of Hf-Al-O films was stable under rapid thermal annealing at temperatures up to at least 1000 °C. Capacitance-voltage measurement of a 38 Å Hf-Al-O film revealed that the relative permittivity of the film was about 16. Such a film showed very low leakage current density of 4.6x10[sup -]³ A/cm² at 1 V gate bias. The Hf-Al-O film under optimized condition did not show any significant interfacial layer at the interface and an equivalent oxide thickness of less than 10 Å has been achieved. The formation of Hf-O and Al-O bonds in the film was revealed by x-ray photoelectron spectroscopy.
URI: http://hdl.handle.net/10397/548
ISSN: 0021-8979
Rights: © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in P.F. Lee et al., J. Appl. Phys. 93, 3665 (2003) and may be found at http://link.aip.org/link/?jap/93/3665.
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