Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5390
Title: Effect of defect-induced internal field on the aging of relaxors
Authors: Wu, Z
Duan, W
Wang, Y 
Gu, BL
Zhang, XW
Keywords: Ageing
Crystal defects
Dielectric relaxation
Monte Carlo methods
Optical susceptibility
Permittivity
Relaxor ferroelectrics
Issue Date: 1-Feb-2003
Publisher: American Physical Society
Source: Physical review B, condensed matter and materials physics, 1 Feb. 2003, v. 67, no. 5, 052101, p. 1-4 How to cite?
Journal: Physical review B 
Abstract: The effect of a defect-induced internal field on the dielectric response of relaxor ferroelectrics is investigated using a Monte Carlo simulation. It was observed that only at a small temperature range near the temperature of the dielectric maximum does the susceptibility decrease markedly due to the internal field. This temperature range increases with enhancing internal field. We found that the susceptibility is almost independent of the internal field width at low internal field width, and then decreases linearly with enhancing internal field width. This dependence of the susceptibility on the internal field width is very similar to the relation of the dielectric constant with logarithmic aging time, which probably suggests a linear dependence of the internal field on the logarithm of the aging time. The frequency dependence of the susceptibility aging is sensitive to the temperature. With increasing temperature, the curve of the susceptibility change against logarithmic frequency varies from concave to approximately linear, and then to convex, which is in agreement with the recent aging rate measurement.
URI: http://hdl.handle.net/10397/5390
ISSN: 1098-0121 (print)
1550-235X (online)
DOI: 10.1103/PhysRevB.67.052101
Rights: Physical Review B © 2003 The American Physical Society. The Journal's web site is located at http://prb.aps.org/
Appears in Collections:Journal/Magazine Article

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