Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/5301
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Electronic and Information Engineering | - |
dc.creator | Chen, XY | - |
dc.creator | Ng, AMC | - |
dc.creator | Fang, F | - |
dc.creator | Ng, YH | - |
dc.creator | Djurišić, AB | - |
dc.creator | Tam, HL | - |
dc.creator | Cheah, KW | - |
dc.creator | Gwo, S | - |
dc.creator | Chan, WK | - |
dc.creator | Fong, WKP | - |
dc.creator | Lui, HF | - |
dc.creator | Surya, C | - |
dc.date.accessioned | 2014-12-11T08:26:58Z | - |
dc.date.available | 2014-12-11T08:26:58Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/5301 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Xinyi Chen et al., J. Appl. Phys. 110, 094513 (2011) and may be found at http://link.aip.org/link/?jap/110/094513. | en_US |
dc.subject | Brightness | en_US |
dc.subject | Cathodoluminescence | en_US |
dc.subject | Electrodeposition | en_US |
dc.subject | Gallium compounds | en_US |
dc.subject | III-V semiconductors | en_US |
dc.subject | II-VI semiconductors | en_US |
dc.subject | Indium compounds | en_US |
dc.subject | Light emitting diodes | en_US |
dc.subject | Nanofabrication | en_US |
dc.subject | Nanorods | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Semiconductor quantum wells | en_US |
dc.subject | Semiconductor thin films | en_US |
dc.subject | Wide band gap semiconductors | en_US |
dc.subject | Zinc compounds | en_US |
dc.title | ZnO nanorod/GaN light-emitting diodes : the origin of yellow and violet emission bands under reverse and forward bias | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: Xinyi Chen | en_US |
dc.description.otherinformation | Author name used in this publication: Alan Man Ching Ng | en_US |
dc.description.otherinformation | Author name used in this publication: Aleksandra B Djurišić | en_US |
dc.description.otherinformation | Author name used in this publication: Kok Wai Cheah | en_US |
dc.description.otherinformation | Author name used in this publication: Patrick Wai Keung Fong | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 12 | - |
dc.identifier.volume | 110 | - |
dc.identifier.issue | 9 | - |
dc.identifier.doi | 10.1063/1.3653835 | - |
dcterms.abstract | ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m² and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l’éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 1 Nov. 2011, v. 110, no. 9, 094513, p. 1-12 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2011-11-01 | - |
dc.identifier.isi | WOS:000297062100123 | - |
dc.identifier.scopus | 2-s2.0-81355142776 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r58830 | - |
dc.description.ros | 2011-2012 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Chen_Nanorod_Light-emitting_Diodes.pdf | 4.24 MB | Adobe PDF | View/Open |
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