Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4979
Title: Epitaxial and highly electrical conductive La₀.₅Sr₀.₅TiO₃films grown by pulsed laser deposition in vacuum
Authors: Wu, W
Lu, F
Wong, KH
Pang, GKH
Choy, CL
Zhang, YH
Keywords: Lanthanum compounds
Strontium compounds
Pulsed laser deposition
Atomic force microscopy
X-ray diffraction
Electrical resistivity
Vapour phase epitaxial growth
Vacuum deposition
Issue Date: 15-Jul-2000
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 July 2000, v. 88, no. 2, p. 700-704 How to cite?
Journal: Journal of applied physics 
Abstract: The target material with nominal composition of La₀.₅Sr₀.₅TiO₃sintered in air is an insulator and not a single-phase compound. By pulsed laser ablation in vacuum at the multiphase La–Sr–Ti–O target, however, highly electrical conductive and epitaxial La₀.₅Sr₀.₅TiO₃films have been fabricated on LaAlO₃(001) substrates. Structural characterization using three-axis x-ray diffraction (θ–2θ scan, ω-scan rocking curve, and ϕ scan) reveals that the films have a pseudocubic structure and grow on the substrates with a parallel epitaxial relationship. Atomic force microscopy images show the films have quite smooth surface, for a film 200 nm thick, the roughness R[sub a] is about 0.31 nm over the 1 μmX1 μm area. Resistivity versus temperature measurements indicate that the films are metallic at 2–300 K and have resistivity of 64 μΩ cm at 300 K, which is about one order lower than that of the single-phase La₀.₅Sr₀.₅TiO₃bulk materials. After the same deposition procedure, epitaxial La₀.₅Sr₀.₅TiO₃films have also been grown on TiN buffered (001) Si substrates.
URI: http://hdl.handle.net/10397/4979
ISSN: 0021-8979 (print)
1089-7550 (online)
DOI: 10.1063/1.373724
Rights: © 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu et al., J. Appl. Phys. 88, 700 (2000) and may be found at http://link.aip.org/link/?jap/88/700.
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