Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4973
Title: Dynamic process of domain switching in ferroelectric films
Authors: Wang, B
Xia, R
Fan, H
Woo, CH
Keywords: Ferroelectric materials
Ferroelectric thin films
Electric domains
Ferroelectric switching
Free energy
Ginzburg-Landau theory
Dielectric polarisation
Issue Date: 1-Sep-2003
Publisher: American Institute of Physics
Source: Journal of applied physics, 1 Sept. 2003, v. 94, no. 5, p. 3384-3389 How to cite?
Journal: Journal of applied physics 
Abstract: In this article, a general variational formulation is established for the dynamics of domain switching in ferroelectric thin films. By incorporating the kinetic energy in the Landau free energy expansion, we obtain a second-order time-dependent Ginzburg–Landau evolution equation, which can be used to analyze the frequency-dependent dielectric and ferroelectric properties of the materials. A numerical model is developed to calculate the time-dependent polarization and electric-field distribution during the domain switching process. As an example of practical importance, a ferroelectric film with 180° domain boundaries perpendicular to the film surface is studied. Domain switching is found to proceed in two stages, the initial nucleation and growth of the ferroelectric domain, followed by the expansion of the domain through the sidewise motion of the 180° domain walls, until the spontaneous polarization in the entire electrified area is reversed.
URI: http://hdl.handle.net/10397/4973
ISSN: 0021-8979 (print)
1089-7550 (online)
DOI: 10.1063/1.1599958
Rights: © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in B. Wang et al., J. Appl. Phys. 94, 3384 (2003) and may be found at http://link.aip.org/link/?jap/94/3384.
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