Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4779
Title: The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors
Authors: Li, J
Du, J
Xu, J
Chan, HLW 
Yan, F 
Issue Date: 16-Jan-2012
Source: Applied physics letters, 16 Jan. 2012, v. 100, 033301, p. 1-4
Abstract: Organic thin-film transistors based on a high mobility n-type semiconductor poly{[n,n9-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bithiophene)} P(NDI2OD-T2) and different polymer gate dielectrics are fabricated. The average electron mobility decreases from 0.76 to 0.08 cm²/Vs with the increase of the gate dielectric constant from 2.6 to 7.8. The P(NDI2OD-T2) film shows unconventional face-on molecular packing, which results in short distances and pronounced interactions between electrons and gate dielectric. Therefore, the decrease of the electron mobility with the increasing dielectric constant is attributed to the Fröhlich polaron effect for the interaction between electrons in the channel and ionic polarization cloud in the gate dielectric.
Keywords: Electron mobility
Organic field effect transistors
Organic semiconductors
Permittivity
Polymer films
Semiconductor thin films
Thin film transistors
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.3678196
Rights: © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Jinhua Li et al., Appl. Phys. Lett. 100, 033301 (2012) and may be found at http://link.aip.org/link/?apl/100/033301
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