Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4777
Title: Electroluminescence from AlN nanowires grown on p-SiC substrate
Authors: Yang, HY
Yu, SF 
Hui, YY
Lau, SP 
Issue Date: 8-Nov-2010
Source: Applied physics letters, 8 Nov. 2010, v. 97, no. 19, 191105, p. 1-3
Abstract: Aluminum nitride (AlN) nanowires were prepared by the carbothermal reduction method. A heterojunction light-emitting diode (LED) was fabricated by depositing randomly aligned AlN nanowires onto p-type 4H–SiC substrate. When a forward bias voltage greater than 8 V was applied to the LED, a broad band emission peaked at 417 nm could be observed. The peak deconvolution revealed four emission peaks at ∼ 400, 420, 468, and 525 nm. These emission peaks may be attributed to the radiative recombination between electrons from trap-level states and holes from the valence band of the AlN nanowires.
Keywords: Aluminium compounds
Electroluminescence
Electron traps
Electron-hole recombination
Hole traps
III-V semiconductors
Light emitting diodes
Nanofabrication
Nanowires
Semiconductor growth
Semiconductor heterojunctions
Semiconductor quantum wires
Silicon compounds
Valence bands
Wide band gap semiconductors
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.3513308
Rights: © 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H. Y. Yang et al., Appl. Phys. Lett. 97, 191105 (2010) and may be found at http://link.aip.org/link/?apl/97/191105
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