Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4574
Title: Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition
Authors: Tong, F
Hao, JH 
Chen, ZP
Gao, G
Miao, XS
Keywords: Amorphous magnetic materials
Amorphous semiconductors
Carrier density
Electric admittance
Ferromagnetic materials
Frustration
Germanium compounds
Iron compounds
Magnetic thin films
Magnetisation
Phase change materials
Pulsed laser deposition
RKKY interaction
Semiconductor growth
Semiconductor thin films
Semimagnetic semiconductors
Short-range order
Issue Date: 22-Aug-2011
Publisher: American Institute of Physics
Source: Applied physics letters, 22 Aug. 2011, v. 99, 081908, p. 1-3 How to cite?
Journal: Applied physics letters 
Abstract: Phase change control of ferromagnetism in Ge₀.₉₈Fe₀.₀₂Te thin film prepared by pulsed laser deposition is investigated. The magnetic property of Fe doped phase change material GeTe is found to vary with phase change between amorphous and crystalline states corresponding to the variation of conductance during phase change. The results indicate that a fast control of ferromagnetism by phase change can be realized. The measurement of temperature dependent magnetization shows a long range ferromagnetic interaction in ordered crystalline phase and a short range ferromagnetic interaction in frustrated amorphous phase, which is consistent with phase change.
URI: http://hdl.handle.net/10397/4574
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.3628660
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Tong, Appl. Phys. Lett. 99, 081908 (2011) and may be found at http://link.aip.org/link/?apl/99/081908
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