Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/432
Title: Epitaxial growth of SrTiO₃ thin film on Si by laser molecular beam epitaxy
Authors: Zhou, X
Miao, J
Dai, J 
Chan, HLW 
Choy, CL 
Wang, Y 
Li, Q
Issue Date: 3-Jan-2007
Source: Applied physics letters, 3 Jan. 2007, v. 90, 012902, p. 1-3
Abstract: SrTiO₃ thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO₃ was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO₃/Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO₃ and the interfacial structure. Electrical measurements revealed that the SrTiO₃ film was highly resistive.
Keywords: Molecular beam epitaxial growth
Strontium compounds
Thin films
Laser materials processing
Strontium
X-ray diffraction
Interface structure
Transmission electron microscopy
Semiconductor-metal boundaries
Electrical resistivity
Silicon
Elemental semiconductors
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
Rights: © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X.Y. Zhou et al. Appl. Phys. Lett. 90, 12902 (2007) and may be found at http://link.aip.org/link/?apl/90/12902
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