Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/430
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorLee, PF-
dc.creatorDai, J-
dc.creatorWong, KH-
dc.creatorChan, HLW-
dc.creatorChoy, CL-
dc.date.accessioned2014-12-11T08:27:41Z-
dc.date.available2014-12-11T08:27:41Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/430-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in P. F. Lee et al. Appl. Phys. Lett. 82, 2419 (2003) and may be found at http://link.aip.org/link/?apl/82/2419en_US
dc.subjectDielectric thin filmsen_US
dc.subjectPulsed laser deposition,en_US
dc.subjectMOS capacitorsen_US
dc.subjectHafnium compoundsen_US
dc.subjectAluminium compoundsen_US
dc.subjectTransmission electronen_US
dc.subjectMicroscopyen_US
dc.titleStudy of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Sien_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage2419-
dc.identifier.epage2421-
dc.identifier.volume82-
dc.identifier.issue15-
dcterms.abstractAmorphous thin films of Hf-Al-O (with atomic ratio of Al/Hf of about 1.4) were deposited on (100) p-Si substrates by pulsed-laser deposition using a HfO₂ and Al₂O₃ composite target. Transmission electron microscopy was employed for a detailed study of the interfacial reaction between the Hf-Al-O films and the Si substrates. Islands of Hf silicide formed from interfacial reaction were observed on the surface of the Si substrate. The formation of Hf silicide is attributed to the presence of Al oxide in the films that triggers the reaction between Hf atoms in the amorphous Hf-Al-O films and Si under an oxygen deficient condition. The impact of silicide formation on the electrical properties was revealed by high-frequency capacitance-voltage (C-V) measurements on metal-oxide-semiconductor capacitors. The observed abnormal C-V curve due to interfacial reaction was discussed.-
dcterms.bibliographicCitationApplied physics letters, 14 Apr. 2003, v. 82, no. 15, p.2419-2421-
dcterms.isPartOfApplied physics letters-
dcterms.issued2003-04-14-
dc.identifier.isiWOS:000182104900017-
dc.identifier.scopus2-s2.0-0037651096-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr14035-
dc.description.ros2002-2003 > Academic research: refereed > Publication in refereed journal-
dc.description.oapublished_final-
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