Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/428
Title: Thickness dependence of in-plane dielectric and ferroelectric properties of Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin films epitaxially grown on LaAlO₃
Authors: Zhou, X
Wang, D
Zheng, RK
Tian, H
Qi, J
Chan, HLW 
Choy, CL 
Wang, Y 
Issue Date: 26-Mar-2007
Source: Applied physics letters, 26 Mar. 2007, v. 90, 132902, p. 1-3
Abstract: The authors have studied the effects of film thickness on the lattice strain and in-plane dielectric and ferroelectric properties of Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin films epitaxially grown on LaAlO₃ (001) single crystal substrates. With increasing film thickness from 20 to 300 nm, the in-plane lattice parameter (a) increased from 0.395 to 0.402 nm while the out-of-plane lattice parameter (c) remained almost unchanged, which led to an increased a/c ratio (tetragonality) changing from 0.998 to 1.012 and consequently resulted in a shift of Curie temperature from 306 to 360 K associated with an increase of the in-plane remnant polarization and dielectric constant of the film.
Keywords: Permittivity
Barium compounds
Strontium compounds
Epitaxial layers
Ferroelectric materials
Ferroelectric thin films
Lattice constants
Ferroelectric Curie temperature
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
Rights: © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X.Y. Zhou et al. Appl. Phys. Lett. 90, 132902 (2007) and may be found at http://link.aip.org/link/?apl/90/132902
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