Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4246
Title: Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films
Authors: Yao, Y
Lu, SG
Chen, H
Zhai, J
Wong, KH
Keywords: Pulsed laser deposition
Antiferroelectric materials
Ferroelectric thin films
Lead compounds
Lanthanum compounds
Permittivity
Surface roughness
Fatigue
Issue Date: 1-Jul-2004
Publisher: American Institute of Physics
Source: Journal of applied physics, 1 July 2004, v. 96, no. 1, p. 569-574 How to cite?
Journal: Journal of applied physics 
Abstract: Lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films of ~420 nm with compositions in the antiferroelectric tetragonal region have been prepared on Pt-buffered Si substrates by pulsed laser deposition. Effects of oxygen pressure during deposition were studied, with emphasis placed on the electrical and dielectric properties of the films. The dielectric constant and the maximum polarization increased with the oxygen pressure during deposition, from 75 to 125 mTorr. So did the dielectric strength. This property enhancement with deposition oxygen pressure was believed to be due to the reduction of pyrochlore phase in the films. However, increasing the oxygen pressure beyond 150 mTorr during deposition had led to the increase of surface roughness, which eventually resulted in film cracking. It was also found that increasing the oxygen pressure did not benefit the fatigue performance in any appreciable way.
URI: http://hdl.handle.net/10397/4246
ISSN: 0021-8979 (print)
1089-7550 (online)
DOI: 10.1063/1.1758312
Rights: © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Yao et al., J. Appl. Phys. 96, 569 (2004) and may be found at http://link.aip.org/link/?jap/96/569.
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