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Title: Interface-oxygen-loss-controlled voltage offsets in epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃ thin-film capacitors with La₀.₇Sr₀.₃MnO₃ electrodes
Authors: Wu, W
Wong, KH
Choy, CL
Keywords: Lead compounds
Epitaxial layers
Ferroelectric thin films
Thin film capacitors
Ferroelectric capacitors
Dielectric polarisation
Dielectric hysteresis
Ferroelectric Curie temperature
Internal stresses
Lanthanum compounds
Strontium compounds
Issue Date: 22-Nov-2004
Publisher: American Institute of Physics
Source: Applied physics letters, 22 Nov. 2004, v. 85, no. 21, p. 5013-5015 How to cite?
Journal: Applied physics letters 
Abstract: Epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃(PZT) thin-film capacitors with La₀.₇Sr₀.₃MnO₃(LSMO) electrodes have been grown on (LaAlO₃)₀.₃(SrAl₀.₅Ta₀.₅O₃)₀.₇ (001) substrates by pulsed-laser deposition. The process-induced imprint behavior in the ferroelectric capacitors was examined by in situ and ex situ annealing at various conditions. It was found that for the capacitors in situ annealed at reduced oxygen pressures, where the LSMO electrodes are stable, voltage offsets in the polarization-electric field hysteresis loops were observed only for those treated at temperatures higher than the Curie temperature. At lower temperatures, the oxygen loss may be suppressed by stresses arising primarily from the paraelectric-to-ferroelectric transformation. However, for the capacitors ex situ annealed at the same low temperature, large voltage offsets were induced due to the oxygen instability of the LSMO electrodes. We show evidence that the imprint is caused by oxygen loss at the PZT∕LSMO interface, and closely related to the variation of the PZT structure.
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.1827929
Rights: © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu, K. H. Wong & C. L. Choy, Appl. Phys. Lett. 85, 5013 (2004) and may be found at
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