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Title: The effects of interdiffusion on the subbands in GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths
Authors: Chan, MCY
Surya, C 
Wai, PKA 
Keywords: Chemical interdiffusion
III-V semiconductors
Gallium compounds
Gallium arsenide
Indium compounds
Quantum well lasers
Internal stresses
Interface states
Spectral line shift
Valence bands
Issue Date: 1-Jul-2001
Publisher: American Institute of Physics
Source: Journal of applied physics, 1 July 2001, v. 90, no. 1, p. 197-201 How to cite?
Journal: Journal of applied physics 
Abstract: The interdiffusion of GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs single quantum well (QW) structure with well width of 6 nm is studied theoretically. The as-grown Ga concentration in the QW is chosen to be 0.7 and 0.6 for the operation wavelengths of 1.3 and 1.55 μm, respectively. We studied the effects of interdiffusion on the in-plane strain, confinement potential, and subband energy levels of the QW using Fick’s law. The diffusion coefficients of both the well and barrier layers are assumed to be constant. The effects of valence band mixing and strains are included in the calculation of the electron and hole subband structures. We find that the group-III interdiffusion effects can result in blueshifts of 123 and 211 nm in the GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs QW at operation wavelength of 1.3 μm (x=0.7) and 1.55 μm (x=0.6), respectively. Our results show that interdiffusion technique can be used to tune the operating wavelengths of GaInAsN/GaAs lasers for multiwavelength applications such as in the sources of dense wavelength division multiplexed optical communication systems.
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.1370110
Rights: © 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. C. Y. Chan, C. Surya & P. K. A. Wai, J. Appl. Phys. 90, 197 (2001) and may be found at
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