Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4211
Title: Dielectric properties of Ba₀.₆Sr₀.₄TiO₃ thin films using Pb₀.₃Sr₀.₇TiO₃buffer layers
Authors: Wang, SX
Hao, JH 
Wu, Z
Wang, DY
Zhuo, Y
Zhao, X
Keywords: Barium compounds
Buffer layers
Dielectric losses
Dielectric thin films
Lead compounds
Multilayers
Permittivity
Strontium compounds
Issue Date: 17-Dec-2007
Publisher: American Institute of Physics
Source: Applied physics letters, 17 Dec. 2007, v. 91, no. 25, 252908, p. 1-3 How to cite?
Journal: Applied physics letters 
Abstract: Ba₀.₆Sr₀.₄TiO₃ (BST) thin films buffered with Pb₀.₃Sr₀.₇TiO₃(PST) at each side of the interface contact with electrodes (PST/BST/PST) were deposited on Pt/Ti/SiO₂/Si substrates. The dielectric properties of the films were measured using planar Pt/PST/BST/PST/Pt/Ti/SiO2/Si capacitor structures. The existence of a PST layer between the BST and Pt electrode can improve the dielectric properties of the BST film. The loss tangent of the multilayered films annealed at 750 °C was found to be 0.016 at 1 MHz and room temperature. The films showed a ∼ 31.7% tunability of the permittivity at an applied bias field of 0.85 MV/cm. This suggests that such films have potential applications for integrated device applications.
URI: http://hdl.handle.net/10397/4211
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.2827583
Rights: © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S.-X. Wang et al., Appl. Phys. Lett. 91, 252908 (2007) and may be found at http://apl.aip.org/resource/1/applab/v91/i25/p252908_s1
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