Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4204
Title: Critical thickness for dislocation generation during ferroelectric transition in thin film on a compliant substrate
Authors: Zheng, Y
Wang, B
Woo, CH 
Issue Date: 21-Aug-2006
Source: Applied physics letters, 21 Aug. 2006, v. 89, no. 8, 083115, p. 1-3
Abstract: The formation energy of misfit dislocations in a ferroelectric thin film grown on compliant substrate is calculated based on the Landau-Devonshire formalism and Timosheko’s method for thermal stresses. The critical thickness is shown to change significantly according to the polarization in the film, leading to serious concerns, particularly for thick substrates, in the device design stage.
Keywords: Ferroelectric thin films
Dislocations
Thermal stresses
Dielectric polarisation
Ferroelectric transitions
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.2338515
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Zheng, B. Wang & C. H. Woo, Appl. Phys. Lett. 89, 083115 (2006) and may be found at http://apl.aip.org/resource/1/applab/v89/i8/p083115_s1
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