Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4203
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dc.contributorDepartment of Applied Physics-
dc.creatorCurreem, KKS-
dc.creatorLee, PF-
dc.creatorWong, KS-
dc.creatorDai, J-
dc.creatorZhou, MJ-
dc.creatorWang, J-
dc.creatorLi, Q-
dc.date.accessioned2014-12-11T08:24:09Z-
dc.date.available2014-12-11T08:24:09Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4203-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K. K. S. Curreem et al., Appl. Phys. Lett. 88, 182905 (2006) and may be found at http://apl.aip.org/resource/1/applab/v88/i18/p182905_s1en_US
dc.subjectHafnium compoundsen_US
dc.subjectHigh-k dielectric thin filmsen_US
dc.subjectGe-Si alloysen_US
dc.subjectSemiconductor materialsen_US
dc.subjectCompressive strengthen_US
dc.subjectInternal stressesen_US
dc.subjectPulsed laser depositionen_US
dc.subjectX-ray photoelectron spectraen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectAluminaen_US
dc.subjectChemical interdiffusionen_US
dc.subjectAnnealingen_US
dc.subjectSemiconductor-insulator boundariesen_US
dc.titleComparison of interfacial and electrical characteristics of HfO₂and HfAlO high-k dielectrics on compressively strained Si[sub 1−x]Ge[sub x]en_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: P. F. Leeen_US
dc.description.otherinformationAuthor name used in this publication: J. Y. Daien_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume88-
dc.identifier.issue18-
dc.identifier.doi10.1063/1.2201887-
dcterms.abstractInterfacial reactions and electrical properties of HfO₂and HfAlO high-k gate dielectric films on strained Si[sub 1−x]Ge[sub x](x = 17%) fabricated by pulsed-laser deposition were investigated. The dielectric films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. We found that alloying of HfO₂with alumina can reduce the GeO[sub x] formation at the interfacial layer and thus reduce the Ge diffusion during the film post-thermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 1 May 2006, v. 88, no. 18, 182905, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2006-05-01-
dc.identifier.isiWOS:000237321600065-
dc.identifier.scopus2-s2.0-33646524777-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr29080-
dc.description.ros2005-2006 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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