Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4203
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Curreem, KKS | - |
dc.creator | Lee, PF | - |
dc.creator | Wong, KS | - |
dc.creator | Dai, J | - |
dc.creator | Zhou, MJ | - |
dc.creator | Wang, J | - |
dc.creator | Li, Q | - |
dc.date.accessioned | 2014-12-11T08:24:09Z | - |
dc.date.available | 2014-12-11T08:24:09Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4203 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K. K. S. Curreem et al., Appl. Phys. Lett. 88, 182905 (2006) and may be found at http://apl.aip.org/resource/1/applab/v88/i18/p182905_s1 | en_US |
dc.subject | Hafnium compounds | en_US |
dc.subject | High-k dielectric thin films | en_US |
dc.subject | Ge-Si alloys | en_US |
dc.subject | Semiconductor materials | en_US |
dc.subject | Compressive strength | en_US |
dc.subject | Internal stresses | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | X-ray photoelectron spectra | en_US |
dc.subject | Transmission electron microscopy | en_US |
dc.subject | Alumina | en_US |
dc.subject | Chemical interdiffusion | en_US |
dc.subject | Annealing | en_US |
dc.subject | Semiconductor-insulator boundaries | en_US |
dc.title | Comparison of interfacial and electrical characteristics of HfO₂and HfAlO high-k dielectrics on compressively strained Si[sub 1−x]Ge[sub x] | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: P. F. Lee | en_US |
dc.description.otherinformation | Author name used in this publication: J. Y. Dai | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 88 | - |
dc.identifier.issue | 18 | - |
dc.identifier.doi | 10.1063/1.2201887 | - |
dcterms.abstract | Interfacial reactions and electrical properties of HfO₂and HfAlO high-k gate dielectric films on strained Si[sub 1−x]Ge[sub x](x = 17%) fabricated by pulsed-laser deposition were investigated. The dielectric films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. We found that alloying of HfO₂with alumina can reduce the GeO[sub x] formation at the interfacial layer and thus reduce the Ge diffusion during the film post-thermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 1 May 2006, v. 88, no. 18, 182905, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2006-05-01 | - |
dc.identifier.isi | WOS:000237321600065 | - |
dc.identifier.scopus | 2-s2.0-33646524777 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r29080 | - |
dc.description.ros | 2005-2006 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Curreem_Comparison_HfO2_HfAIO.pdf | 802.34 kB | Adobe PDF | View/Open |
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