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Title: Mechanisms of imprint effect on ferroelectric thin films
Authors: Zhou, Y
Chan, HK
Lam, CH 
Shin, FG
Keywords: Ferroelectric thin films
Dielectric hysteresis
Internal stresses
Electric domains
Vacancies (crystal)
Ferroelectric materials
Space charge
Issue Date: 15-Jul-2005
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 July 2005, v. 98, no. 2, 024111, p. 1-9 How to cite?
Journal: Journal of applied physics 
Abstract: We have developed a single/double layer model to explain horizontal shifting of measured D-E hysteresis loops (imprint) for ferroelectric thin films. Such phenomenon can be explained by considering three mechanisms or their multiple effects: (1) stress induced by film/electrode lattice mismatch or clamping, (2) domain pinning induced by, e.g., oxygen vacancies, or (3) degradation of ferroelectric properties in film/electrode surface layers. First, it is found that hysteresis loops under the influence of stress exhibit large horizontal shifts with magnitudes comparable to those observed in experiments. Second, a pseudo-non-switching layer with a large coercive field is assumed to be present at the film/electrode interface in an otherwise homogeneous ferroelectric thin film, and in this case our simulation also shows a large imprint effect. Third, it is also found that time-dependent space-charge-limited conduction is likely to be one origin for the occurrence of imprint.
ISSN: 0021-8979 (print)
1089-7550 (online)
DOI: 10.1063/1.1984075
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Zhou et al., J. Appl. Phys. 98, 024111 (2005) and may be found at
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