Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4045
Title: Explicit expressions for the dynamic polarization behavior in ferroelectrics with symmetric/asymmetric electrical conductivity
Authors: Wong, CK
Tsang, CH
Shin, FG
Keywords: Dielectric polarisation
Ferroelectric materials
Electrical conductivity
Ferroelectric thin films
Delectric hysteresis
Issue Date: 1-Jul-2004
Publisher: American Institute of Physics
Source: Journal of applied physics, 1 July 2004, v. 96, no. 1, p. 575-583 How to cite?
Journal: Journal of applied physics 
Abstract: We model the dynamic polarization behavior of ferroelectric films by an analytical approach. Using a parallelogramlike P-E hysteresis model, explicit expressions were obtained for describing the D-E loops of ferroelectric films as would be measured from a Sawyer-Tower circuit. By introducing the consideration of electrical conduction, resistive losses inflate the ferroelectric loop to some extent. In addition, an asymmetric conduction will result in polarization offsets with the magnitude and direction depending on the asymmetric conductivities of the materials. The inflated loop, as well as the offset phenomena, which have been observed experimentally [e.g., L. Zheng, C. Lin, W.-P. Xu, and M. Okuyama, J. Appl. Phys. 79, 8634 (1996)], will be discussed by means of our modeled results. Some simple exact formulas have been derived and the effects of electric, dielectric, and ferroelectric parameters, as well as the applied field on the "apparent" polarization were also examined.
URI: http://hdl.handle.net/10397/4045
ISSN: 0021-8979 (print)
1089-7550 (online)
DOI: 10.1063/1.1759078
Rights: © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C. K. Wong, C. H. Tsang & F. G. Shin, J. Appl. Phys. 96, 575 (2004) and may be found at http://link.aip.org/link/?jap/96/575.
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