Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/40053
Title: Electrical properties of Au/PLT/Pt ferroelectric film capacitor
Other Titles: Au/PLT/Pt铁电薄膜电容的电学性能
Authors: Li, J
Yuan, N
Li, K
Tong, KY
Chan, HLW 
Keywords: PLT thin film
Ferroelectric film capacitor
FERAM
Issue Date: 2001
Publisher: 中国学术期刊(光盘版)电子杂志社
Source: 固体电子学研究与进展 (Research & progress of solid state electronics), 2001, v. 21, no. 3, p. 354-360 How to cite?
Journal: 固体电子学研究与进展 (Research & progress of solid state electronics) 
Abstract: 用 Sol- Gel方法研制了 PL T[(Pb0 .83 L a0 .17) Ti O3 ]铁电薄膜 ,结合非挥发性铁电存储器对铁电电容的要求 ,研究了 Au/ PL T/ Pt铁电电容和漏电流、剩余极化、疲劳、开关特性和揭电常数等性能。对厚度为 0 .4 μm的薄膜 ,5 V时的剩余极化强度 Pr=2 2 μC/ cm2 ,矫顽场强度 Ec=6 0k V/ cm,相对介电常数约 130 0 ,漏电流 Id=3.2× 10 -8A/ mm2 ,开关特性优良。疲劳测试表明 ,对Vpp=10 V的锯齿信号 ,经 4 .5× 10 11周期后 ,剩余极化强度衰减 2 0 %。上述性能表明 ,该 PL T膜能用于非挥发性铁电存储器的试制
The PLT[(Pb 0.83La 0.17)TiO 3]thin film was prepared by a Sol-Gel method according to the requirements of non-volatile ferroelctric random access memory(FERAM) on ferroelectric capacitor. The electrical properties, such as the hysteresis loop, dielectric constant, leakage current, fatigue and switching characteristic were measured. The results show that the polarization switching is excellent, the remanent polarization is about P r=22 μc/cm 2,coercive field is E c=60 kV/cm, effective dielectric constant K df=1300, leakage current I d=3.2×10 -8 A/mm 2 for a 0.4 μm PLT film at 5 V. Fatigue measurement illustrated the remanent polarization P r was reduced by 20% after 4. 5×10 11 cycles at a peak to peak voltage ,V pp=10 V of saw tooth signal.
URI: http://hdl.handle.net/10397/40053
ISSN: 1000-3819
Rights: © 2001 China Academic Journal Electronic Publishing House. It is to be used strictly for educational and research use.
© 2001 中国学术期刊电子杂志出版社。本内容的使用仅限于教育、科研之目的。
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