Readout and testing of 256 elements pyroelectric infrared imaging array

Abstract

根据无机纳米陶瓷与聚偏氟乙烯 -三氟乙烯复合敏感膜电容元件具有高阻抗的特点 ,设计了 MOS场效应管为敏感元件作阻抗转换 ,用串联 MOS管作各元件的通断隔离 ,用双 1 6级移位寄存器作集成热释电阵列 X,Y向的寻址控制 ,保证了 1 6× 1 6面阵红外成像信号的可靠读出 .设计了由时钟信号产生、X、Y选通和揿零等功能的 2 56元集成热释电阵列红外成像信号的检测电路 ,满足了单元信号手动测试和 2 56元自动信号测试的要求 A 256 elements integrated infrared imaging array with nanocomposite sensing film was fabricated. The 5 μm thick polyimide layer was chosen as the thermal insulator and MOSFET was designed as the impedance converter. Two PMOS FETs in series were used as isolation of each element and two 16 bit shift registers were applied as address selection of X and Y direction of pyroelectric array. The testing circuit was consisted of clock signal generator, on off selection of the each element and signal zero set up parts. This design ensured reliable readout of the weak signal of 16*16 integrated pyroelectric infrared array, satisfied the demand of manual test of each element and auto test of 256 integrated array.