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Title: Microstructure and electric properties of lead lanthanum titanate thin film under transverse electric fields
Authors: Song, ZT
Chan, HLW 
Ding, YP
Chong, N
Choy, CL 
Keywords: Lead compounds
Lanthanum compounds
Ferroelectric materials
Ferroelectric thin films
MOCVD coatings
Crystal structure
X-ray diffraction
Scanning electron microscopy
Dielectric losses
Dielectric polarisation
Issue Date: 15-Mar-2002
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 Mar. 2002, v. 91. no. 6, p.3779-3784 How to cite?
Journal: Journal of applied physics 
Abstract: Polycrystalline lead lanthanum titanate thin film having perovskite structure was fabricated by metalorganic deposition (MOD) on a ZrO₂/SiO₂/Si substrate at 600°C for 1 h in O₂ atmosphere. Columnar structured ZrO₂ buffer layer was also prepared by a MOD process under the same condition. Electrical measurements were conducted on interdigitated electrodes. The crystalline structure and growth behavior of the films have been studied by x-ray diffraction and scanning electron microscopy. It is observed that dielectric response of the film is effected by the cable length used in the measurement and by the values of the ac voltage. Long cable gives rise to an additional resonance peak at high frequency caused by the stray inductance of the contacts and cables. The capacitance and loss tangent over low frequency range shows significant variations due to the trapped charges and space charges in the film. These variations are very dependent on the values of the ac voltage and the length of cable. Meanwhile, the trapped charges and space charges lead to abnormal P-E loops, in which the measured remanent polarization and coercive field increase with increasing frequency.
ISSN: 0021-8979
EISSN: 1089-7550
Rights: © 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z.T. Song et al. J. Appl. Phys. 91, 3779 (2002) and may be found at
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