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Title: Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals
Authors: Zheng, M
Zhu, QX
Li, XY
Yang, MM
Wang, Y 
Li, XM
Shi, X
Luo, HS
Zheng, RK
Issue Date: 2014
Publisher: American Institute of Physics
Source: Journal of applied physics, 2014, v. 116, no. 11, 113911 How to cite?
Journal: Journal of applied physics 
Abstract: We have fabricated magnetoelectric heterostructures by growing ferromagnetic La1-xBaxMnO3 (x = 0.2, 0.4) thin films on (001)-, (110)-, and (111)-oriented 0.31Pb(In1/2Nb1/2)O-3-0.35Pb(Mg-1/3 wNb(1/2))O-3-0.34PbTiO(3) (PINT) ferroelectric single-crystal substrates. Upon poling along the [001], [110], or [111] crystal direction, the electric-field-induced non-180 degrees domain switching gives rise to a decrease in the resistance and an enhancement of the metal-to-insulator transition temperature T-C of the films. By taking advantage of the 180 degrees ferroelectric domain switching, we identify that such changes in the resistance and T-C are caused by domain switching-induced strain but not domain switching-induced accumulation or depletion of charge carriers at the interface. Further, we found that the domain switching-induced strain effects can be efficiently controlled by a magnetic field, mediated by the electronic phase separation. Moreover, we determined the evolution of the strength of the electronic phase separation against temperature and magnetic field by recording the strain-tunability of the resistance [(Delta R/R)(strain)] under magnetic fields. Additionally, opposing effects of domain switching-induced strain on ferromagnetism above and below 197K for the La0.8Ba0.2MnO3 film and 150K for the La0.6Ba0.4MnO3 film, respectively, were observed and explained by the magnetoelastic effect through adjusting the magnetic anisotropy. Finally, using the reversible ferroelastic domain switching of the PINT, we realized non-volatile resistance switching of the films at room temperature, implying potential applications of the magnetoelectric heterostructure in non-volatile memory devices.
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.4896172
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