Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/330
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Title: Annealing effects on the loss and birefringence of silicon oxynitride rectangular optical waveguides
Authors: Zhang, A
Chan, KT
Demokan, S
Chan, VWC
Chan, PCH 
Chan, AHP
Issue Date: 29-Aug-2005
Source: Applied physics letters, 2005, v. 87, 101105, p. 1-3
Abstract: Silicon oxynitride rectangular optical waveguides have been fabricated by plasma-enhanced chemical vapor deposition and dry etching. The propagation loss and polarization dependent loss in as-grown samples show a substantial reduction after the samples have been annealed. Birefringence measurements before and after annealing on waveguides of different widths suggest that the waveguide modal birefringence is strongly affected by both waveguide geometry and stress in the material. Hence, the modal birefringence can be minimized by designing the appropriate waveguide geometry to compensate for any stress effects.
Keywords: Silicon compounds
Optical waveguides
Plasma CVD
Etching
Birefringence
Annealing
Stress effects
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Zhang A. et al. Appl. Phys. Lett. 87, 101105 (2005) and may be found at http://link.aip.org/link/?apl/87/101105.
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