Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/3266
Title: Nonvolatile multilevel memory effect by resistive switching in manganite thin films
Authors: Lau, HK
Leung, DCW 
Keywords: Gold
Lanthanum compounds
Magnetic thin films
Random-access storage
Strontium compounds
Switching
Issue Date: 15-Dec-2008
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 Dec. 2008, v. 104, no. 12, 123705, p. 1-4 How to cite?
Journal: Journal of applied physics 
Abstract: A planar multilevel memory structure is proposed and examined based on the resistive switching phenomenon in La₀.₇Sr₀.₃MnO₃ films with gold electrodes. Through the application of specific voltage pulses, such structures can be driven to well-defined intermediate resistance values. Samples were subjected to repeated switching cycles and prolonged reading processes to examine their durability during operations. Prescribed states of the samples could be retained after 10 000 switching cycles, and such states remained stable upon continuous probing. The proposed structure provides a simple scheme for the implementation of compact and nonvolatile multibit memory devices.
URI: http://hdl.handle.net/10397/3266
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.3043801
Rights: © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H.K. Lau & C.W. Leung, J. Appl. Phys. 104, 123705 (2008) and may be found at http://jap.aip.org/resource/1/japiau/v104/i12/p123705_s1.
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