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http://hdl.handle.net/10397/31161
Title: | The structural and in-plane dielectric/ferroelectric properties of the epitaxial (Ba, Sr)(Zr, Ti)O3 thin films | Authors: | Chan, NY Wang, DY Wang, Y Dai, JY Chan, HLW |
Issue Date: | 2014 | Source: | Journal of applied physics, 2014, v. 115, no. 23, 234102, p. 234102-1-234102-7 | Abstract: | Epitaxial (Ba1-xSrx)(Zr0.1Ti 0.9)O3 (BSZT, x = 0 - 0.45) thin films were deposited on (LaAlO3)0.3(Sr2AlTaO6) 0.35 (LSAT) substrates by pulsed laser deposition. The experimental results demonstrate that the structural, dielectric, and ferroelectric properties of the BSZT thin films were greatly dependent on the strontium content. The BSZT thin films transformed from tetragonal to cubic phase when x≥ 0.35 at room temperature. The Curie temperature and room-temperature remnant polarization decrease with increasing strontium concentration. The optimal dielectric properties were found in (Ba0.55Sr 0.45)(Zr0.1Ti0.9)O3 thin films which is in paraelectric state, having tunability of 47% and loss tangent of 0.0338 under an electric field of 20 MV/m at 1 MHz. This suggests that BSZT thin film is a promising candidate for tunable microwave device applications. | Publisher: | American Institute of Physics | Journal: | Journal of applied physics | ISSN: | 0021-8979 | EISSN: | 1089-7550 | DOI: | 10.1063/1.4883963 | Rights: | © 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in N. Y. Chan et al., J. Appl. Phys. 115, 234102 (2014) and may be found at https://dx.doi.org/10.1063/1.4883963 |
Appears in Collections: | Journal/Magazine Article |
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Chan_Structural_In-plane_Dielectric.pdf | 2.43 MB | Adobe PDF | View/Open |
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