Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/29224
Title: Top-interface-controlled fatigue of epitaxial Pb(Zr0.52Ti0.48)O3 ferroelectric thin films on La0.7Sr0.3MnO3 electrodes
Authors: Wu, W
Wong, KH
Choy, CL 
Zhang, YH
Issue Date: 2000
Source: Applied physics letters, 2000, v. 77, no. 21, p. 3441-3443
Abstract: Epitaxial Pb(Zr0.52Ti0.48)O3/La0.7Sr 0.3MnO3(PZT/LSMO) and LSMO/PZT/LSMO heterostructures have been grown on LaAlO3(001) substrates by pulsed-laser deposition. Three types of ferroelectric capacitors, i.e., Pt/PZT/LSMO (A), LSMO/PZT/LSMO (B), and Pt/PZT/LSMO |(C) have been fabricated, where the Pt electrode was sputter deposited onto as-grown (capacitor A) and in situ annealed (capacitor C) PZT/LSMO films, respectively. It is found that the LSMO/PZT/LSMO capacitor shows a low coercive field and good fatigue endurance up to 1010 switching cycles. Similar properties are also obtained for capacitor A. However, the capacitor C. with the PZT film in situ annealed at reduced oxygen pressures, exhibits higher switching voltages and starts to fatigue rapidly at about 106 bipolar switching cycles. Lead deficiency at the surface of the annealed PZT films has been observed. Our results demonstrate that the fatigue performance of PZT/LSMO films, although affected greatly by the electrode configurations, is intrinsically determined by the interface property at the top electrode.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
Rights: © 2000 American Institute of Physics.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in W. Wu et al., Appl. Phys. Lett. 77, (2000) and may be found at https://doi.org/10.1063/1.1327279
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