ZnO random laser diode arrays for stable single-mode operation at high power

Abstract

An array of highly disordered i-ZnO:Al(3%) random cavities, which have 1 μm width, 150 nm thickness, and 2 mm length, is sandwiched between n-ZnO:Al(5%) and p-GaN/sapphire substrate to form an array of heterojunctions. The random cavities, which are electrically isolated and optically coupled with the adjacent random cavities, are laterally separated by a 1 μm wide Al₂O₃ dielectric insulator. Stable single-mode operation is observed from the laser diode array under high electrical pumping (i.e., >6×threshold current) at room temperature.