Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28727
Title: Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor
Authors: Qian, LX
Lai, PT
Tang, WM 
Issue Date: 2014
Source: Applied physics letters, 2014, v. 104, no. 12, 123505, p. 123505-1-123505-5
Abstract: The effects of Ta incorporation in La2O3 gate dielectric of amorphous InGaZnO thin-film transistor are investigated. Since the Ta incorporation is found to effectively enhance the moisture resistance of the La2O3 film and thus suppress the formation of La(OH) 3, both the dielectric roughness and trap density at/near the InGaZnO/dielectric interface can be reduced, resulting in a significant improvement in the electrical characteristics of transistor. Among the samples with different Ta contents, the one with a Ta/(Ta + La) atomic ratio of 21.7% exhibits the best performance, including high saturation carrier mobility of 23.4 cm2/V·s, small subthreshold swing of 0.177 V/dec, and negligible hysteresis. Nevertheless, excessive incorporation of Ta can degrade the device characteristics due to newly generated Ta-related traps.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4869761
Rights: © 2014 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in L. X. Qian, P. T. Lai and W. M. Tang, Appl. Phys. Lett. 104, 123505 (2014) and may be found at https://dx.doi.org/10.1063/1.4869761
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