Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22935
Title: Non-volatile, electric control of magnetism in Mn-substituted ZnO
Authors: Wang, XL
Shao, Q
Leung, CW 
Lortz, R
Ruotolo, A
Issue Date: 2014
Publisher: American Institute of Physics
Source: Applied physics letters, 2014, v. 104, no. 6, e5415 How to cite?
Journal: Applied physics letters 
Abstract: We show that the magnetic properties of a dilute semiconductor oxide can be altered in a reversible and non-volatile manner by the application of an electric field. The selected ferromagnetic oxide was manganese-substituted zinc oxide. Bipolar resistive memory switching was induced in the film sandwiched between two metallic electrodes. The bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment. The scalability of the system was investigated by fabricating devices with lateral size down to 400 nm.
URI: http://hdl.handle.net/10397/22935
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4865428
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