Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22935
Title: Non-volatile, electric control of magnetism in Mn-substituted ZnO
Authors: Wang, XL
Shao, Q
Leung, CW 
Lortz, R
Ruotolo, A
Issue Date: 2014
Source: Applied physics letters, 2014, v. 104, no. 6, 62409, p. 062409-1-062409-4
Abstract: We show that the magnetic properties of a dilute semiconductor oxide can be altered in a reversible and non-volatile manner by the application of an electric field. The selected ferromagnetic oxide was manganese-substituted zinc oxide. Bipolar resistive memory switching was induced in the film sandwiched between two metallic electrodes. The bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment. The scalability of the system was investigated by fabricating devices with lateral size down to 400 nm.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4865428
Rights: © 2014 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. L. Wang et al., Appl. Phys. Lett. 104, 062409 (2014) and may be found at https://dx.doi.org/10.1063/1.4865428
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