Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22217
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorMiao, Q-
dc.creatorZeng, M-
dc.creatorZhang, Z-
dc.creatorLu, X-
dc.creatorDai, J-
dc.creatorGao, X-
dc.creatorLiu, JM-
dc.date.accessioned2015-05-26T08:16:58Z-
dc.date.available2015-05-26T08:16:58Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/22217-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2014 AIP Publishing LLC.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Q. Miao et al., Appl. Phys. Lett. 104, 182903 (2014) and may be found at https://dx.doi.org/10.1063/1.4875617en_US
dc.titleSelf-assembled nanoscale capacitor cells based on ultrathin BiFeO 3 filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume104-
dc.identifier.issue18-
dc.identifier.doi10.1063/1.4875617-
dcterms.abstractUltrathin multiferroic BiFeO3 (BFO) films with self-assembled surface nano-islands on La0.67Sr0.33MnO3/(100) SrTiO3 substrates are fabricated by a one-step pulsed laser deposition process using the Bi-rich BFO target. It is revealed that these surface nano-islands mainly consist of conductive Bi2O3 outgrowths, which serve as top electrodes for the nanoscale BFO capacitor cells with lateral size of 10-30nm. The ferroelectric BFO layer underneath these Bi2O3 nanoislands prefers certain complex domain structure with vertical and antiparallel polarization components (the so-called "anti-domain structure") and reduced domain switching fields. Moreover, these nanoscale capacitor cells exhibit the resistive switching IV behavior, offering opportunities for application in ultrahigh density non-volatile memories.-
dcterms.bibliographicCitationApplied physics letters, 2014, v. 104, no. 18, 182903, p. 182903-1-182903-5-
dcterms.isPartOfApplied physics letters-
dcterms.issued2014-
dc.identifier.isiWOS:000336249600042-
dc.identifier.scopus2-s2.0-84900413780-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr69038-
dc.description.ros2013-2014 > Academic research: refereed > Publication in refereed journal-
dc.description.oapublished_final-
Appears in Collections:Journal/Magazine Article
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