Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/22217
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Miao, Q | - |
dc.creator | Zeng, M | - |
dc.creator | Zhang, Z | - |
dc.creator | Lu, X | - |
dc.creator | Dai, J | - |
dc.creator | Gao, X | - |
dc.creator | Liu, JM | - |
dc.date.accessioned | 2015-05-26T08:16:58Z | - |
dc.date.available | 2015-05-26T08:16:58Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/22217 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2014 AIP Publishing LLC. | en_US |
dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Q. Miao et al., Appl. Phys. Lett. 104, 182903 (2014) and may be found at https://dx.doi.org/10.1063/1.4875617 | en_US |
dc.title | Self-assembled nanoscale capacitor cells based on ultrathin BiFeO 3 films | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 104 | - |
dc.identifier.issue | 18 | - |
dc.identifier.doi | 10.1063/1.4875617 | - |
dcterms.abstract | Ultrathin multiferroic BiFeO3 (BFO) films with self-assembled surface nano-islands on La0.67Sr0.33MnO3/(100) SrTiO3 substrates are fabricated by a one-step pulsed laser deposition process using the Bi-rich BFO target. It is revealed that these surface nano-islands mainly consist of conductive Bi2O3 outgrowths, which serve as top electrodes for the nanoscale BFO capacitor cells with lateral size of 10-30nm. The ferroelectric BFO layer underneath these Bi2O3 nanoislands prefers certain complex domain structure with vertical and antiparallel polarization components (the so-called "anti-domain structure") and reduced domain switching fields. Moreover, these nanoscale capacitor cells exhibit the resistive switching IV behavior, offering opportunities for application in ultrahigh density non-volatile memories. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 2014, v. 104, no. 18, 182903, p. 182903-1-182903-5 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2014 | - |
dc.identifier.isi | WOS:000336249600042 | - |
dc.identifier.scopus | 2-s2.0-84900413780 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r69038 | - |
dc.description.ros | 2013-2014 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Miao_Self-assembled_Nanoscale_Capacitor.pdf | 2.34 MB | Adobe PDF | View/Open |
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