Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/19464
Title: Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy
Authors: Yang, Z
Huang, W
Hao, J 
Issue Date: 2013
Publisher: American Institute of Physics
Source: Applied physics letters, 2013, v. 103, no. 3, 31919 How to cite?
Journal: Applied physics letters 
Abstract: Techniques of X-ray and ultraviolet photoelectron spectroscopy are performed to investigate the energy band discontinuity of pulsed-laser-deposited SrTiO3 (STO)/GaAs heterostructure. The valence band offset is determined to be 2.6 eV, while the conduction band offset is deduced to be 0.7 eV. As a consequence, an energy band diagram of STO/GaAs with a type II band alignment forming at the interface is precisely constructed. The chemical states across the STO/GaAs interface are investigated by sputter-depth profile, and there are no detectable interfacial reaction and intermediate layer occurring between the epitaxial STO film and GaAs substrate.
URI: http://hdl.handle.net/10397/19464
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4816356
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