Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/19464
Title: Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy
Authors: Yang, Z
Huang, W
Hao, J 
Issue Date: 2013
Source: Applied physics letters, 2013, v. 103, no. 3, 31919, p. 031919-1-031919-5
Abstract: Techniques of X-ray and ultraviolet photoelectron spectroscopy are performed to investigate the energy band discontinuity of pulsed-laser-deposited SrTiO3 (STO)/GaAs heterostructure. The valence band offset is determined to be 2.6 eV, while the conduction band offset is deduced to be 0.7 eV. As a consequence, an energy band diagram of STO/GaAs with a type II band alignment forming at the interface is precisely constructed. The chemical states across the STO/GaAs interface are investigated by sputter-depth profile, and there are no detectable interfacial reaction and intermediate layer occurring between the epitaxial STO film and GaAs substrate.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4816356
Rights: © 2013 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Z. Yang, W. Huang and J. Hao, Appl. Phys. Lett. 103, 031919 (2013) and may be found at https://dx.doi.org/10.1063/1.4816356
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