Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18801
Title: Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO
Authors: Wang, XL
Ku, PS
Shao, Q
Cheng, WF
Leung, CW 
Ruotolo, A
Issue Date: 2013
Publisher: Amer Inst Physics
Source: Applied physics letters, 2013, v. 103, no. 22, 223508 How to cite?
Journal: Applied Physics Letters 
Abstract: We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.
URI: http://hdl.handle.net/10397/18801
ISSN: 0003-6951
DOI: 10.1063/1.4834795
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