Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18801
Title: Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO
Authors: Wang, XL
Ku, PS
Shao, Q
Cheng, WF
Leung, CW 
Ruotolo, A
Issue Date: 2013
Source: Applied physics letters, 2013, v. 103, no. 22, 223508, p. 223508-1-223508-4
Abstract: We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4834795
Rights: © 2013 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. L. Wang et al., Appl. Phys. Lett. 103, 223508 (2013) and may be found at https://dx.doi.org/10.1063/1.4834795
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