Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/17508
Title: Graphene/gallium arsenide-based Schottky junction solar cells
Authors: Jie, W
Zheng, F
Hao, J 
Issue Date: 2013
Publisher: American Institute of Physics
Source: Applied physics letters, 2013, v. 103, no. 23, 233111 How to cite?
Journal: Applied physics letters 
Abstract: Chemical-vapor-deposited single- and bi-layer graphene sheets have been transferred onto n-type GaAs substrates. The rectifying characteristics and photovoltaic behaviors of graphene/GaAs junctions have been systematically investigated. The graphene sheets can be combined with the underlying n-type GaAs substrates to form Schottky junctions. For bilayer graphene, the Schottky junction shows photovoltaic effects with the open-circuit voltage of 0.65 V and the short-circuit current density of 10.03 mA/cm2, yielding a power conversion efficiency of 1.95%, which are superior to single-layer one. Such performance parameters are comparable to those of other pristine graphene/semiconductor junction-based devices.
URI: http://hdl.handle.net/10397/17508
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4839515
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