Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/17508
Title: Graphene/gallium arsenide-based Schottky junction solar cells
Authors: Jie, W
Zheng, F
Hao, J 
Issue Date: 2013
Source: Applied physics letters, 2013, v. 103, no. 23, 233111, p. 233111-1-233111-4
Abstract: Chemical-vapor-deposited single- and bi-layer graphene sheets have been transferred onto n-type GaAs substrates. The rectifying characteristics and photovoltaic behaviors of graphene/GaAs junctions have been systematically investigated. The graphene sheets can be combined with the underlying n-type GaAs substrates to form Schottky junctions. For bilayer graphene, the Schottky junction shows photovoltaic effects with the open-circuit voltage of 0.65 V and the short-circuit current density of 10.03 mA/cm2, yielding a power conversion efficiency of 1.95%, which are superior to single-layer one. Such performance parameters are comparable to those of other pristine graphene/semiconductor junction-based devices.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4839515
Rights: © 2013 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in W. Jie, F. Zheng and J. Hao, Appl. Phys. Lett. 103, 233111 (2013) and may be found at https://dx.doi.org/10.1063/1.4839515
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