Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/15925
Title: Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga<inf>2</inf>O<inf>3</inf> thin films
Authors: Wu, Z
Bai, G
Hu, Q
Guo, D
Sun, C
Ji, L
Lei, M
Li, L
Li, P
Hao, J 
Tang, W
Issue Date: 2015
Publisher: American Institute of Physics Inc.
Source: Applied physics letters, 2015, v. 106, no. 17, 171910 How to cite?
Journal: Applied Physics Letters 
Abstract: We have investigated structural and near-infrared (NIR) luminescence of Nd3+-doped β-Ga2O3 thin films (Nd:Ga2O3) with different Nd3+ doping concentrations. With an increase of Nd3+ content, the crystal lattice of the films expands, while the energy band gap shrinks. Moreover, NIR luminescence is investigated as a function of Nd3+ doping concentration. The measured results are related to the structural change and energy transfer of cross relaxation process ascribed to 4F3/2 - 4I9/2, 4F3/2 - 4I11/2, and 4F3/2 - 4I13/2 of the phosphor films. This work implies that the enhanced NIR luminescence and blue-shift observation are associated with the lattice distortion and the variation in the crystal field of Nd: Ga2O3.
URI: http://hdl.handle.net/10397/15925
ISSN: 0003-6951
DOI: 10.1063/1.4919586
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