Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/15925
Title: Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga<inf>2</inf>O<inf>3</inf> thin films
Authors: Wu, Z
Bai, G
Hu, Q
Guo, D
Sun, C
Ji, L
Lei, M
Li, L
Li, P
Hao, J 
Tang, W
Issue Date: 2015
Source: Applied physics letters, 2015, v. 106, no. 17, 171910, p. 171910-1-171910-4
Abstract: We have investigated structural and near-infrared (NIR) luminescence of Nd3+-doped β-Ga2O3 thin films (Nd:Ga2O3) with different Nd3+ doping concentrations. With an increase of Nd3+ content, the crystal lattice of the films expands, while the energy band gap shrinks. Moreover, NIR luminescence is investigated as a function of Nd3+ doping concentration. The measured results are related to the structural change and energy transfer of cross relaxation process ascribed to 4F3/2 - 4I9/2, 4F3/2 - 4I11/2, and 4F3/2 - 4I13/2 of the phosphor films. This work implies that the enhanced NIR luminescence and blue-shift observation are associated with the lattice distortion and the variation in the crystal field of Nd: Ga2O3.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4919586
Rights: © 2015 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Z. Wu et al., Appl. Phys. Lett. 106, 171910 (2015) and may be found at https://dx.doi.org/10.1063/1.4919586
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